| 摘要 |
The problem of the passive device formation process generated by warpage of the wafer can be solved by forming the stacked or single type semiconductor package inside the plate. The semiconductor package comprises as follows. A plurality of firsts and second via patterns(102, 104) are formed in the central part and both edge parts. The plate(100) having the connection wiring connecting the first VIA pattern and the second via pattern are formed in the upper side. A plurality of passive devices(110) is formed in the upper side of the plate including the connection wiring. The semiconductor chip(120) has a plurality of bonding pads(122) which is connected to first VIA patterns and is adhered to the plate lower-part. An plurality of outer connectors(150) is adhered to each second via pattern of the plate lower-part. |
