发明名称 Ion implant beam angle integrity monitoring and adjusting
摘要 A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.
申请公布号 US7459703(B2) 申请公布日期 2008.12.02
申请号 US20050217700 申请日期 2005.08.31
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 WALTHER STEVEN;JEONG UKYO;MEHTA SANDEEP
分类号 G21K5/10 主分类号 G21K5/10
代理机构 代理人
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