发明名称 |
Active matrix display and electrooptical device |
摘要 |
A display device having a source line formed over a substrate; a gate line formed over the substrate extending across the source line; a pixel formed over the substrate at an intersection of the source and gate lines, the pixel having: first and second thin film transistors where a source or drain of the first thin film transistor is electrically connected to the source line; a pixel electrode electrically connected to a source or drain of the second thin film transistor where the first and second thin film transistors are electrically connected between the pixel electrode and the source line; where a portion of the source line covers a portion of the first thin film transistor, where a width of the source line is larger than a width of a channel region of the first thin film transistor, and where the pixel electrode does not overlap the source line.
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申请公布号 |
US7459724(B2) |
申请公布日期 |
2008.12.02 |
申请号 |
US20060636455 |
申请日期 |
2006.12.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG |
分类号 |
H01L27/14;G02F1/136;G02F1/1362;G09G3/36;H01L29/786 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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