发明名称 Active matrix display and electrooptical device
摘要 A display device having a source line formed over a substrate; a gate line formed over the substrate extending across the source line; a pixel formed over the substrate at an intersection of the source and gate lines, the pixel having: first and second thin film transistors where a source or drain of the first thin film transistor is electrically connected to the source line; a pixel electrode electrically connected to a source or drain of the second thin film transistor where the first and second thin film transistors are electrically connected between the pixel electrode and the source line; where a portion of the source line covers a portion of the first thin film transistor, where a width of the source line is larger than a width of a channel region of the first thin film transistor, and where the pixel electrode does not overlap the source line.
申请公布号 US7459724(B2) 申请公布日期 2008.12.02
申请号 US20060636455 申请日期 2006.12.11
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG HONGYONG
分类号 H01L27/14;G02F1/136;G02F1/1362;G09G3/36;H01L29/786 主分类号 H01L27/14
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