发明名称 Method of forming a conductive pattern
摘要 A method of forming a conductive pattern can form a conductive pattern where the aspect ratio of the height to the width is high with favorable electrical connectivity. The method includes a process that forms a first resist layer, which exposes formation positions of a conductive pattern, on a formation surface on which the conductive pattern is to be formed, a process that forms a first stage conductive pattern by carrying out plating at the positions exposed from the first resist layer, a process that forms a first stage protective film which protects the first stage conductive pattern, a process that grinds flat a surface of the first stage protective film and end surfaces of the first stage conductive pattern, a process that forms a second resist layer, which exposes parts of the end surfaces of the first stage conductive pattern more narrowly than the first stage conductive pattern, on the surface of the first stage protective film and the end surfaces of the first stage conductive pattern, and a process that forms a second stage conductive pattern by carrying out plating at the positions on the end surfaces of the first stage conductive pattern that are exposed from the second resist layer.
申请公布号 US7459097(B2) 申请公布日期 2008.12.02
申请号 US20060482467 申请日期 2006.07.07
申请人 FUJITSU LIMITED 发明人 YAMAZAKI KOTARO;ITO TAKASHI;SATO JUNJI
分类号 B44C1/22 主分类号 B44C1/22
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