发明名称 |
Method for manufacturing a semiconductor device including top gate thin film transistor and method for manufacturing an active matrix device including top gate thin film transistor |
摘要 |
The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a semiconductor device using such a semiconductor film. The present invention is characterized by heating a semiconductor film due to a heat processing method (RTA method: Rapid Thermal Anneal method) to irradiate light emitted from a lamp light source after crystallizing the semiconductor film by laser light, thereby reducing the ridge.
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申请公布号 |
US7459354(B2) |
申请公布日期 |
2008.12.02 |
申请号 |
US20040896906 |
申请日期 |
2004.07.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHNUMA HIDETO;TAKANO TAMAE;MITSUKI TORU |
分类号 |
H01L33/00;H01L21/20;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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