METHOD FOR PROGRAMMING IN NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING OF NAND FLASH MEMORY DEVICE

摘要

The programming method of the non-volatile memory device is provided to improve the programming efficiency of the non-volatile memory device and to program the data with the low programming voltage. The data programming method comprises as follows. A step is for applying the programming voltage to the control gate(112) in the memory cell. A step is for grounding the impurity region(128). A step is for applying the fringe voltage to the conductive layer pattern to generate the fringe field in the floating gate(108). The memory cell comprises the gate structure, the impurity region, and the conductive layer pattern. The gate structure is located on the surface substrate and comprises the tunnel oxide file pattern, the floating gate, and the dielectric layer and the control gate. The impurity regions are disposed beneath the substrate surface of both sides of the gate structure. The conductive layer pattern is separated from the floating gate and is faced to the floating gate.