| 摘要 |
A method for manufacturing a semiconductor device formed by stacking a plurality of semiconductor elements on a substrate includes the steps of stacking the plurality of semiconductor elements on the substrate to form plural stages, placing the substrate substantially vertically and charging an underfill agent into spaces defined between the substrate and the corresponding semiconductor element and spaces defined among the stacked semiconductor elements through a nozzle from above side faces of the stacked semiconductor elements, and curing the charged underfill agent.
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