NON-VOLATILE MEMORY DEVICE CAPABLE OF MULTI BIT PROGRAMING AND THE METHOD FOR MANUFACTURING THE SAME

摘要

The non-volatile memory device and the method for manufacturing the same are provided to achieve one cell-two bit program of the low voltage, micro type, highly integrated, high-end, high reliability. The non-volatile memory device comprises the semiconductor substrate(21), the tunnel insulating layer(22), the charge trapping layer(23), the memory layer(25), the gate electrode layer(26). The source and drain region(27) are formed in the semiconductor substrate. The tunnel insulating layer has the step height which the central part is lower than the peripheral unit. The charge trapping layer has the step height which the lower surface of both sides is lower than the upper surface of the central part. The memory layer comprises the blocking insulating layer formed on the charge trapping layer. The gate electrode layer is formed on the blocking insulating layer.