发明名称 |
Method of fabricating silicon-based MEMS devices |
摘要 |
A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.
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申请公布号 |
US7459329(B2) |
申请公布日期 |
2008.12.02 |
申请号 |
US20050254774 |
申请日期 |
2005.10.21 |
申请人 |
DALSA SEMICONDUCTOR INC. |
发明人 |
OUELLET LUC;ANTAKI ROBERT |
分类号 |
H01L21/00;B81B3/00;B81C1/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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