发明名称 |
LCD device including a TFT for reducing leakage current |
摘要 |
An amorphous-silicon TFT (thin-film-transistor) in an LCD device has a larger channel length at both the edge portions of the channel of the TFT compared to the central portion of the channel by forming chamfers at the corners of the source and drain electrodes. The larger channel length at both the edge portions reduces the leakage current caused by the turned-around light incident onto the channel.
|
申请公布号 |
US7460190(B2) |
申请公布日期 |
2008.12.02 |
申请号 |
US20040923432 |
申请日期 |
2004.08.20 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
HASHIMOTO YOSHIAKI;KIMURA SHIGERU;SUZUKI SEIJI |
分类号 |
G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L29/417;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|