发明名称 |
Pattern forming method, semiconductor device manufacturing method and exposure mask set |
摘要 |
First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region.
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申请公布号 |
US7459265(B2) |
申请公布日期 |
2008.12.02 |
申请号 |
US20050255877 |
申请日期 |
2005.10.24 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
ISHIBASHI TAKEO;SAITO TAKAYUKI;ITOH MAYA;NAKAO SHUJI |
分类号 |
G03F7/00;G03F1/32;G03F1/68;G03F1/70;H01L21/027 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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