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发明名称
以经掺杂奈米粒子为主的半导体连接物
摘要
本发明揭示一种用于一电子装置中之经掺杂半导体连接物及一种用于制造该连接物之方法。该连接物包括:一在一基板上之第一多晶半导体层,该第一多晶半导体层掺杂有施体或受体以使得该第一经掺杂半导体层具有一第一极性,该第一层包括经熔合半导体奈米粒子;及一第二层,该第二层与一基板上之该第一半导体层接触以形成该半导体连接物。
申请公布号
TW200847244
申请公布日期
2008.12.01
申请号
TW096149579
申请日期
2007.12.21
申请人
柯达公司
发明人
凯司B 卡汉
分类号
H01L21/22(2006.01)
主分类号
H01L21/22(2006.01)
代理机构
代理人
陈长文
主权项
地址
美国
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