| 摘要 |
The semiconductor device and manufacturing method thereof are provided to improve speed and the integration of the semiconductor device by using the interlayer insulating film as the low-K dielectric layer in forming the copper wiring. The semiconductor device comprises the semiconductor substrate(10), the first insulation layer(20), the first interconnection trench(41), the first pad trench(45), the first metal wiring(51), the first pad(55), the second insulation layer, the second wiring trench(82), the second pad trench(85), the second pad(95). The semiconductor substrate comprises the cell region(A) and pad area(B). The first insulation layer is formed in the semiconductor substrate. The first interconnection trench is formed in the first insulation layer of the cell region and has the first width. The first pad trench has the second width which is broader than the first breadth and is formed in the first insulation layer of the pad area. The first pad is formed inside of the first metal wiring and the first pad trench formed inside of the first interconnection trench. The second insulation layer is formed on the first insulation layer. The second wiring trench is formed in the second insulation layer in order to expose the first metal wiring. The second pad trench exposes the first pad trench and is formed in the second insulation layer to have the same location and width of the first pad trench. The second pad is formed in the second metal wiring and the second pad trench formed in the second wiring trench.
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