| 摘要 |
<p>The tungsten chemical mechanical polishing method and the slurry are provided to improve the yield and to require the low cost. The tungsten chemical mechanical polishing method comprises as follows. The tungsten(30) is formed on the via hole and the interlayer insulating film(20) in which the via hole is formed. In the first temperature of 20~30‹C, the slurry having an etching inhibitor suppressing the oxidation of the tungsten is injected in the tungsten. In the second temperature of 50~60‹C, the surface of the tungsten is oxidized and the oxidized tungsten is removed. The processing temperature of the second temperature is changed to the first temperature in order to control the removal rate of the tungsten. The surface of the tungsten is oxidized and the oxidized tungsten is removed.</p> |
