发明名称 |
METHOD FOR GROWTH OF SEMIPOLAR (AL,IN,GA,B)N OPTOELECTRONIC DEVICES |
摘要 |
A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes. ® KIPO & WIPO 2009
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申请公布号 |
KR20080104148(A) |
申请公布日期 |
2008.12.01 |
申请号 |
KR20087022396 |
申请日期 |
2008.09.12 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
ZHONG HONG;KAEDING JOHN FRANCIS;SHARMA RAJAT;SPECK JAMES STEPHEN;DENBAARS STEVEN P.;NAKAMURA SHUJI |
分类号 |
C30B33/06;H01L33/00 |
主分类号 |
C30B33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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