发明名称 METHOD OF SUBSTRATE TREATMENT, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM
摘要 Substrate treating apparatus (100) including support table (103) for not only supporting of treatment object substrate (W) but also heating of the treatment object substrate (W); treatment vessel (101) having the support table (103) disposed therein; and gas supply section (102) for supplying of treating gas into the treatment vessel (101), characterized in that the treating gas contains at least one member selected from among an organic salt, an organic acid amine salt, an organic acid amide and an organic acid hydrazide. ® KIPO & WIPO 2009
申请公布号 KR20080104156(A) 申请公布日期 2008.12.01
申请号 KR20087023367 申请日期 2007.03.13
申请人 TOKYO ELECTRON LIMITED 发明人 MIYOSHI HIDENORI
分类号 H01L21/324;H01L21/28 主分类号 H01L21/324
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