发明名称 Method for Fabrication the Image Senser
摘要 An image sensor include an interlayer dielectric layer formed over a semiconductor substrate; a color filter array formed over the interlayer dielectric layer; a planarization layer formed over the color filter; and a microlens array having a continuous, gapless shape formed over the planarization layer and spatially corresponding to the color filter array. The microlens array is composed of a first dielectric layer and a second dielectric layer formed over the first dielectric layer.
申请公布号 KR100871552(B1) 申请公布日期 2008.12.01
申请号 KR20070024920 申请日期 2007.03.14
申请人 发明人
分类号 H01L27/146 主分类号 H01L27/146
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