| 摘要 |
<p>The semiconductor package having a pad is provided to reduce the leakage of the inputted high frequency signal. The semiconductor package having a pad comprises the deep N-well regions(Deep N-Well Region, 220), N + domains(the N+ Region, and 230a or 230b), the ground(Ground) part(240a or 240b), the element isolation region(Shallow Trench Isolation Region, STI Region, 250), the signal(Signal) input unit(260) and IMD layer(Inter Metal Dielectric layer, IMD layer, 270). The deep N-well region is formed within the semiconductor layer(210). The N + region is formed on the deep N-well region. The element isolation region is formed on the deep N-well region The ground portion is formed on the N + region and comprises the grounding pad(242), and is separated with N + region. The signal input part is formed on the element isolation region and comprises the signal pad(262). The IMD layer is formed on the semiconductor layer by burying the signal input part and ground portion to expose the grounding pad and signal pad to the surface.</p> |
