| 摘要 |
<p>The manufacturing method of the flash memory device is provided to reduce the manufacturing cost and lower the failure rate of the flash memory device. The flash memory device comprises the first gate pattern(111a), the second gate pattern(111b), the first dummy insulation film pattern, the first dummy gate pattern(115b), the interlayer insulating film(119), the first spacer and the second spacer. The first gate pattern and the second gate pattern are connected to one pattern on the semiconductor substrate. The first dummy insulation film pattern covers the first gate pattern while exposing the second gate pattern. The first dummy gate pattern is formed in the first dummy insulation film pattern image correspondingly to the first gate pattern. And the second gate pattern is exposed. The interlayer insulating film is formed in the first gate pattern and the semiconductor substrate having the first dummy gate pattern and the second gate pattern. The interlayer insulating film has contact holes(121, 123, 125) exposing a part of the second gate pattern. The first spacer covers the first gate pattern, and the side of the first dummy gate pattern and the first dummy insulation film pattern. The second spacer covers the side of the second gate pattern while being connected with the first spacer.</p> |
