METHODS TO ELIMINATE ôM-SHAPEö ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR
摘要
<p>METHODS TO ELIMINATE "M-SHAPE" ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.</p>
