| 摘要 |
<p>A semiconductor device and the manufacturing method thereof are provided to improve the driving ability of device by suppressing the increasing phenomenon of the sheet resistance. A semiconductor device comprises the silicon substrate in which the active area is formed to be protruded to the pillar type and is segmented by the element isolation region and active area; the element isolation film formed within the element isolation region; the gate formed as the form covering the top part of the active area protruded to the pillar type; the drain region(231) formed at the both sides of the lower column portion of the active area protruded to the pillar type; the bit line(243) formed as the form connected to the neighboring active area.</p> |
