NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING NITRIDE SEMICONDUCTOR LASER DEVICE

摘要

A nitride semiconductor light emitting device and a method for manufacturing a nitride semiconductor laser device improve COD level of the nitride semiconductor light emitting device after aging by enhancing adhesion between a light emitting part and a coating layer by the coating layer made of oxy-nitride on the light emitting layer. A nitride semiconductor laser device(100) includes a resonator section. A light emitting part is made of a nitride semiconductor. A coating layer made of oxy-nitride is formed on the resonator section of the light emitting side. The coating layer made of the oxy-nitride is formed on the resonator section of a light reflecting side. The coating layer on the light emitting side and the light reflecting side is the oxy-nitride of aluminum.