| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a zinc oxide semiconductor layer for a thin film transistor using solution treatment at a low temperature. SOLUTION: A solution including zinc oxide and a complexing agent is manufactured. The solution is allowed to adhere to a substrate, and is then heated to form a semiconductor layer on the substrate. The thin film transistor using the zinc oxide semiconductor layer is favorable in mobility and an on/off ratio. COPYRIGHT: (C)2009,JPO&INPIT
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