| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that makes a depression small, the depression formed on a surface of a field oxide film edge (namely, a bird's beak). SOLUTION: The manufacturing method for a semiconductor device includes the steps of forming a silicon nitride film on a silicon substrate 1, patterning the silicon nitride film to form a nitride film mask 5, forming a silicon oxide film all over the upper side of the silicon substrate 1 where the nitride film mask 5 is formed, etching back the silicon oxide film to form a sidewall 9 on a side surface of the nitride film mask 5, thermally oxidizing the surface of the silicon substrate 1 locally with the nitride film mask 5 and the sidewall 9 used as a mask to form a field oxide film 11, and etching a deteriorated layer 13 formed on the surface of the nitride film mask 5 through thermal oxidation with an HF solution to remove it. COPYRIGHT: (C)2009,JPO&INPIT
|
