发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technology for detecting a state that the hunting because of temperature is generated in a range where a threshold temperature is not exceeded as abnormality in a process for manufacturing a semiconductor device using a heat treatment device. SOLUTION: A plurality of lamps 4a to 4l formed in a heat treatment device are turned on when currents are supplied, and a semiconductor wafer is heated. In this case, heat is supplied to the outer peripheral region of the semiconductor wafer by the lamp 4i. The lamp 4i which supplies heat to the outer peripheral region of the semiconductor wafer is provided with a current sensor 6, and currents to be supplied to the lamp 4i are measured by a current sensor 6. A current value measured by the current sensor 6 is converted into an effective value by an effective value conversion part 7, and input to a detection part 8. Whether or not hunting exists in the current value is detected by the detection part 8, and when the hunting which is a predetermined value or more exists, it is judged that temperature abnormality is generated in the semiconductor wafer, and warning is executed by a warning part 9. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008288480(A) 申请公布日期 2008.11.27
申请号 JP20070133686 申请日期 2007.05.21
申请人 RENESAS TECHNOLOGY CORP 发明人 KOBA NORIYUKI;KIRINO TAKAHARU
分类号 H01L21/26;H01L21/31 主分类号 H01L21/26
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