| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of suppressing a size increase and achieving a stable and high-speed operation by enabling each component transistor to exhibit a sufficient operation capability even when the device is loaded in a miniaturized system LSI. SOLUTION: A row decoder circuit includes a transistor having a first gate oxide film thickness, a transistor having a second gate oxide film thickness, and a transistor having a third gate oxide thick film. Thus, even for a control circuit of a lower voltage, a word line is driven at a high speed while securing reliability. COPYRIGHT: (C)2009,JPO&INPIT
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