| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate-treating apparatus which can improve the uniformity of the treated state between substrates. SOLUTION: A treatment furnace 40 includes: a process tube 43 which forms a treatment chamber 46; a manifold 49 which is connectively arranged at the bottom edge of the process tube 43; an exhaust pipe 63 which is connected to the manifold 49; a supply pipe 70 which supplies a gas into the treatment chamber 46; and a nozzle 77 which has a plurality of outlets 79. A buffering pipe 73 is connected with the nozzle 77 by a plurality of connecting pipes 75. A hollow part 78 of the nozzle 77 communicates with a buffer 74 of the buffering pipe 73 through a communication path 76 of the connecting pipe 75. The gas which has been supplied into the buffer diffuses in the buffer, flows into the nozzle, and spouts out from each of the outlets of the nozzle. Thereby, the flow rate from each of the outlets becomes uniform in the overall length of the nozzle, and the film formed on wafers become mutually uniform. COPYRIGHT: (C)2009,JPO&INPIT
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