| 摘要 |
A driving method of a nand flash memory device using first and second pass voltage is provided to improve a problem of a under program by decreasing a sensing current flowing into a cell string. A plurality of memory cells is programmed to a fixed voltage. Among the memory cells, a word line of the memory cell which is not selected receives a first pass voltage(Vpass). The memory cells verifies a programmed level, and perform a reading motion for determining whether a state where the memory cell is programmed or not. The word line of the memory cell which is not selected receives a second pass voltage(Vpass) smaller than the first pass voltage. |
