| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a GaN system FET having a high adhesive property between a field plate and an insulating film and forming no oxide film between a gate electrode and a semiconductor layer and a manufacturing method for the structure of the GaN system FET. SOLUTION: A first resist pattern for forming an opening section for forming the gate electrode 2 is formed to the insulating film 21, a reactive-ion etching by an inductive coupling plasma is carried out to the insulating film 21 while using the first resist pattern as a mask and the surfaces of GaN semiconductor layers 10 to 13 are exposed. A gate metal such as NiAu is evaporated, and the gate electrode 2 is formed in a self-alignment manner. Accordingly, the oxide film is not formed to the surfaces of the semiconductor layers. After the gate electrode 2 is formed, a second resist pattern is formed and the field plate 6 is formed on the gate electrode 2 and the insulating film 21 while using the second resist pattern as the mask. Consequently, Ti having the high adhesive property with the insulating film by SiN or the like can be used as the field-plate metal. COPYRIGHT: (C)2009,JPO&INPIT
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