发明名称 |
LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME |
摘要 |
The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved. |
申请公布号 |
WO2008143428(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
WO2008KR02726 |
申请日期 |
2008.05.16 |
申请人 |
SEOUL OPTO DEVICE CO., LTD.;THE UNIVERSITY OF TOKUSHIMA;SAKAI, SHIRO;NAOI, YOSHIKI |
发明人 |
SAKAI, SHIRO;NAOI, YOSHIKI |
分类号 |
H01L33/00;H01L33/22 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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