| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel memory element having a longer element life. SOLUTION: The element has a substrate 101, a supporting layer 102 formed on the substrate 101 and a memory layer 103 formed on the supporting layer 102. The memory layer 103 is formed with compression strain to the supporting layer 102 in a region in contact with the supporting layer 102 of a lower layer. For example, the substrate 101 is constituted of GaAs, and the supporting layer 102 is constituted of single crystal Al<SB>0.7</SB>Ga<SB>0.3</SB>As formed by crystalline growth on the substrate 101 and the memory layer 103 can be just constituted of In<SB>x</SB>Ga<SB>1-x</SB>As. The memory layer 103 has an opening region 132 and has a beam structure 131 constructed between opposed sides of the opening region 132. An opening part 121 is also formed in the supporting layer 102 corresponding to the opening region 132, and a substrate 101 side of the beam structure 131 is more spaced than a lower layer. COPYRIGHT: (C)2009,JPO&INPIT
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