| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device not giving any influence on a control circuit by reducing a generated magnetic field of a power MOS transistor for output. SOLUTION: The semiconductor device 100 is provided with the power MOS transistors 10, 10a, 10b for output having a plurality of transistor cells and a controller 20 for controlling the power MOS transistors for output on a semiconductor substrate 80. The semiconductor device is characterized in that the power MOS transistors for output and the controller are arranged adjacently, each power MOS transistor for output is further provided with a plurality of gate wires 11, 12 arranged in parallel and two wires 15, 16 for feeding the power to the gate arranged oppositely to hold from both sides the plurality of gate wires, and the plurality of gate wires are connected only at one end alternately to the two wires for feeding the power to the gate in such a manner that directions of the feed current of the gate wires provided adjacently are opposed each other. COPYRIGHT: (C)2009,JPO&INPIT
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