METHOD OF SELECTING SEMICONDUCTOR DEVICES WITH INCREASED RELIABILITY

摘要

FIELD: physics; electricity. ^ SUBSTANCE: m-characteristics are measured in a direct current range (1-100 mA) before and after passing a current pulse, with amplitude 1.5-3 times more than the maximum permissible value given by the technical specifications. Selection of the device with increased reliability is done on the basis of the criteria where mp - is the maximum value of parameter m after effect of the current pulse, mi - is the maximum value of parameter m in the initial state. Value A is established based on statistics of the representative sampling of each type of device. ^ EFFECT: increased authenticity and wider functional capabilities. ^ 1 tbl