SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve current drivability of an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor.

SOLUTION: The semiconductor device includes an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate, and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the main surface of the semiconductor substrate, the second region being different from the first region. An internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is different from an internal stress generated in the channel formation region of the p channel conductivity type field effect transistor. The internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is a tensile stress, while the internal stress generated in the channel formation region of the p channel conductivity type field effect transistor is a compressive stress.

COPYRIGHT: (C)2009,JPO&INPIT