| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses the mutual diffusion of impurities in gate electrodes between an n-type gate electrode and a p-type gate electrode and reduces variation in the threshold voltage, having a dual gate electrode exhibiting desirable characteristics, and to provide a manufacturing method for such a semiconductor device. SOLUTION: The semiconductor device includes an element separation region 2 formed in a semiconductor substrate 1, a first active region 1a and a second active region 1b that are surrounded by the element separation region 2, an n-type gate electrode 9A and a p-type gate electrode 9B that are formed on a gate insulating film 5, an insulating film 7 and a silicon region 9C that are formed on the element separation region 2 to separate the n-type gate electrode 9A from the p-type gate electrode 9B, and metal silicide films 12 formed on each face of the n-type gate electrode 9A, the silicon region 9C, p-type gate electrode 9B and the insulating film 7 provided among those areas. The n-type gate electrode 9A and the p-type gate electrode 9B are electrically connected via the metal silicide film 12. COPYRIGHT: (C)2009,JPO&INPIT |
