| 摘要 |
Disclosed herein is a method of cleaning oxide from a surface in the fabrication of an integrated device using reducing radicals and UV radiation. For silicon surfaces, the cleaning may be performed at a temperature at which a hydrogen-terminated passivated surface is stable, such that the surface remains protected after loading into the chamber until the cleaning is performed. Performing the cleaning at a lower temperature also consumes a reduced portion of the thermal budget of a semiconductor device. Epitaxial deposition can then be performed over the cleaned surface.
|
