METHOD FOR CRYSTALLIZING THIN FILM, PROCESS FOR PRODUCING THIN-FILM SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING ELCTRONIC EQUIPMENT, AND PROCESS FOR PRODUCING DISPLAY DEVICE

摘要

A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (a semiconductor thin film) (15) is formed. A light absorbing layer (19) is formed on the upper part of the amorphous silicon film (15) through a buffer layer (17). An energy radiation (Lh) is applied to the light absorbing layer (19) from a continuous wave oscillation laser such as a semiconductor laser. According to the above constitution, while oxidizing only the surface side of the light absorbing layer (19), the amorphous silicon film (15) is crystallized by heat produced by thermal conversion of an energy radiation (Lh) in the light absorbing layer (19) and heat produced by the oxidation reaction to form a microcrystalline silicon film (15a). According to the above constitution, a method for crystallizing a thin film, which can realize a simpler procedure and a lower cost while enjoying good controllability, can be provided.