发明名称 METHOD FOR MANUFACTURING A HIGH STRENGTH SOLDER BUMP THROUGH FORMING MINI BUMP
摘要 <p>The method for manufacturing the high intensity solder bump is provide to improve the electrical mechanical reliability by formation of the metal mini bump. The method for fabricating a high intensity solder bump is provided. A step is for forming the thin conductive film(20) in the substrate. A step is for forming the insulating layer(22) on the thin conductive film. A step is for coating photoresist or the dry film and patterning. A step is for removing photoresist or the dry film by etching the insulating layer. A step is for forming a mini bump. A step is for reflowing the solder to form the solder bump. The mini bump is made of the CuNi nickel - lead or the gold by using electroplating or the electroless plating. The height of the mini bump is 100 micro meters or over 10 micro meters. The substrate is formed with a silicon wafer compound semiconductor wafer quartz glass or a ceramic material.</p>
申请公布号 KR100871066(B1) 申请公布日期 2008.11.27
申请号 KR20070073321 申请日期 2007.07.23
申请人 SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 JUNG, SEUNG BOO;KIM, JONG WOONG;LEE, CHANG YOUNG;JOO, JIN HO
分类号 H01L23/48;H01L21/60 主分类号 H01L23/48
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