发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.
申请公布号 US2008290490(A1) 申请公布日期 2008.11.27
申请号 US20080068771 申请日期 2008.02.12
申请人 DENSO CORPORATION 发明人 FUJII TETSUO;SUGIURA KAZUHIKO
分类号 H01L21/50;H01L23/02 主分类号 H01L21/50
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