摘要 |
A method is disclosed to make a strained-silicon PMOS or CMOS transistor, in which, a compressive stress film is formed by reacting a silane having at least one substituent selected from the group consisting of hydrocarbyl, hydrocarboxy, carbonyl, formyl, carboxylic group, ester group, and halo group and ammonia, or a conventional compressive stress film is implanted with fluorine atoms, oxygen atoms, or carbon atoms, so as to improve the properties of negative bias temperature instability (NBTI).
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