发明名称 |
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION |
摘要 |
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.
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申请公布号 |
US2008290442(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080104131 |
申请日期 |
2008.04.16 |
申请人 |
THIRD DIMENSION (3D) SEMICONDUCTOR, INC. |
发明人 |
HSHIEH FWU-IUAN;PRATT BRIAN D. |
分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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