发明名称 |
PHOTOVOLTAIC CELL WITH SHALLOW EMITTER |
摘要 |
<p>A phototovoltaic semiconductor apparatus for use in forming a solar cell with shallow emitter is disclosed The apparatus includes first and second adjacent oppositely doped volumes of semiconductor material forming a semiconductor heteroj unction The apparatus also includes a first passivation layer of material on the front side, the first passivation layer having a first outer surface and a plurality of openings therethrough defining corresponding unpassivated areas of the front side that are unpassivated by the first passivation layer The apparatus further includes a first conductive anti-reflective coactmg on the first outer surface of the passivation layer and on the corresponding unpassivated areas of the front side The apparatus may further include dielectric antireflective coating on an outer surface of the first passivation layer.</p> |
申请公布号 |
WO2008141415(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
WO2008CA00349 |
申请日期 |
2008.02.22 |
申请人 |
DAY4 ENERGY INC.;RUBIN, LEONID, BORISHOVICH |
发明人 |
RUBIN, LEONID, BORISHOVICH |
分类号 |
H01L31/072;H01L31/0216;H01L31/0224;H01L31/0256 |
主分类号 |
H01L31/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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