CHEMICALLY AMPLIFIED RESIST MATERIAL, TOPCOAT FILM FORMING MATERIAL AND PATTERN FORMING METHOD USING THEM

摘要

PROBLEM TO BE SOLVED: To improve the resolution of a pattern in a chemically amplified resist.

SOLUTION: A resist film 102 comprising a chemically amplified resist containing a polymer, a photoacid generator and a carbamoyloxime is formed on a substrate 101. The resist film 102 is selectively irradiated with exposure light 104 to perform pattern exposure. The resist film 102 subjected to the pattern exposure is heated and the heated resist film 102 is developed, whereby a resist pattern 102a is formed from the resist film 102.

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