发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
In a blue-violet semiconductor laser device, a pair of side surfaces of a semiconductor device structure composed of a nitride based semiconductor layer is respectively positioned inside a pair of side surfaces of a partial substrate composed of a Ge substrate. This causes the pair of side surfaces of the semiconductor device structure and the pair of side surfaces of the partial substrate to be respectively spaced apart from each other by a predetermined distance in a direction perpendicular to the pair of side surfaces of the semiconductor device structure. On the partial substrate, current blocking layers are formed in a region between the pair of side surfaces of the partial substrate and the pair of side surfaces of the semiconductor device structure.
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申请公布号 |
US2008291959(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080123660 |
申请日期 |
2008.05.20 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TOKUNAGA SEIICHI;TAKEUCHI KUNIO |
分类号 |
H01L33/32;H01S5/22;H01L21/76;H01L33/34 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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