DEPOSITING RUTHENIUM FILMS USING IONIZED PHYSICAL VAPOR DEPOSITION (IPVD)

摘要

An iPVD system (200A) is programmed to deposit a barrier and/or seed layer (10) using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates (12, 211 ) using a process which enhances the sidewalÊ (16) coverage compared to the field and bottom (15) coverage(s) while minimizing or eliminating overhang within an IPVD processing chamber (220). In the preferred embodiment, an IPVD apparatus having a frusto-conical ruthenium target (225) equipped with a high density ICP source is provided.