| 摘要 |
A cell 10 (unit cell) constituting a unit is formed from a lower electrode layer 2 (Mo electrode layer) formed on a texture substrate 1 formed with recesses and projections at a surface thereof, a light absorbing layer 3 (CIGS light absorbing layer) including copper, indium, gallium, selenium, a buffer layer thin film 4 of a high resistance formed by InS, ZnS, CdS or the like and an upper electrode layer 5 (TCO) formed by ZnOAl or the like on the light absorbing layer 3, further, a contact electrode portion 6 for connecting the upper electrode layer 5 and the lower electrode layer 2 is formed with an object of connecting a plurality of the unit cells 10 in series. As described later, a Cu/In rate of the contact electrode portion 6 is larger than a Cu/In rate of the light absorbing layer 3, in other words, In is constituted to be small, showing a characteristic of P+ (plus) type or a conductor relative to the light absorbing layer 3 constituting a p type semiconductor. |
