发明名称 SEMICONDUCTOR WAFER POLISHING COMPOSITION, MANUFACTURING METHOD THEREOF, AND POLISH TREATMENT METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a wiring metal polishing composition which does not produce a scar called scratch and has a high polish rate in polishing a substrate having a metal such as wiring formed on a semiconductor wafer, to provide a manufacturing method, and to provide a polishing method. <P>SOLUTION: There are provided a semiconductor wafer polishing composition which contains acid, pH of which is 2 to 6, and which contains an aqueous medium dispersion liquid of a positively-charged silica particle on the surface of which an amino-containing silane coupling agent is coupled, and a polish treatment method using the polishing composition. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008288398(A) 申请公布日期 2008.11.27
申请号 JP20070132223 申请日期 2007.05.18
申请人 NIPPON CHEM IND CO LTD;SPEEDFAM CO LTD 发明人 MIYABE SHINSUKE;MAEJIMA KUNIAKI;IZUMI MASAHIRO;TANAKA HIROAKI
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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