发明名称 |
SEMICONDUCTOR WAFER POLISHING COMPOSITION, MANUFACTURING METHOD THEREOF, AND POLISH TREATMENT METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wiring metal polishing composition which does not produce a scar called scratch and has a high polish rate in polishing a substrate having a metal such as wiring formed on a semiconductor wafer, to provide a manufacturing method, and to provide a polishing method. <P>SOLUTION: There are provided a semiconductor wafer polishing composition which contains acid, pH of which is 2 to 6, and which contains an aqueous medium dispersion liquid of a positively-charged silica particle on the surface of which an amino-containing silane coupling agent is coupled, and a polish treatment method using the polishing composition. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2008288398(A) |
申请公布日期 |
2008.11.27 |
申请号 |
JP20070132223 |
申请日期 |
2007.05.18 |
申请人 |
NIPPON CHEM IND CO LTD;SPEEDFAM CO LTD |
发明人 |
MIYABE SHINSUKE;MAEJIMA KUNIAKI;IZUMI MASAHIRO;TANAKA HIROAKI |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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