发明名称 SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS
摘要 A method of fabricating composite substrates by associating a plurality of transfer layers in spaced relation upon a single intermediate support; providing a support layer on each transfer layer to form a composite substrate; and detaching the composite substrates from the intermediate support. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications.
申请公布号 US2008293217(A1) 申请公布日期 2008.11.27
申请号 US20080187005 申请日期 2008.08.06
申请人 发明人 GHYSELEN BRUNO;LETERTRE FABRICE
分类号 H01L21/30;H01L27/12;H01L21/02;H01L21/762;H01L29/165;H01L29/20;H01L29/24;H01L29/267 主分类号 H01L21/30
代理机构 代理人
主权项
地址