发明名称 Data Writing Method For Flash Memory and Error Correction Encoding/Decoding Method Thereof
摘要 A data writing method for flash memory and an error correction encoding/decoding method thereof are disclosed. In an embodiment of the data writing method, a 6-bit ECC scheme using a Reed-Solomon code derived from a Galois Field GF (29) is used to encode a data for generating a redundant which requires smaller storing space. In an embodiment of the error correction encoding/decoding method, an erase checking value corresponding to the status where all the bytes of data area and parameter storing area are "0xff" is provided to improve the security of stored data.
申请公布号 US2008294965(A1) 申请公布日期 2008.11.27
申请号 US20080126344 申请日期 2008.05.23
申请人 REALTEK SEMICONDUCTOR CORP. 发明人 NI JIAN-QIANG;HE DONG-YU;LIAO CHUN-TING
分类号 H03M13/05;G06F11/10 主分类号 H03M13/05
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