| 摘要 |
<p>Provided is a thin film forming apparatus wherein the film forming temperature is reduced, material gases are prevented from mixing at the time of being switched, a film forming process time is shortened and the service-life of a hot filament is lengthened. In a thin film forming apparatus, a substrate (2) to be processed is held in a reaction chamber (1) which can be depressurized, a substrate holder (3) whose temperature can be controlled is arranged in the reaction chamber, and a thin film is formed on the substrate (2) by introducing material gases (A, B) into the reaction chamber (1). The thin film forming apparatus is provided with a gas heating chamber (10) and a gas switching mechanism (9). The gas heating chamber is provided with gas introducing ports (6, 7), which are connected to the reaction chamber (1) and communicate with gas supply pipes (21, 22, 23) for supplying at least two types of material gases (A, B) and a purge gas (C); and a hot filament (8), which is arranged outside the reaction chamber (1), and permits at least the material gas (B) of one type among the two or more types of material gases (A, B) to pass through. The gas switching mechanism switches the gases to be introduced into the introducing ports (6, 7).</p> |
